continental device india limited an is/iso 9002 and iecq certified manufacturer pnp complementary silicon high voltage transistor 2n5401 (9aw) to-92 cbe marking: cd 5401 hi g h volta g e pnp transistor for general pur p ose and tele p hon y a pp lications. absolute maximum ratings. description symbol value unit collector -emitter voltage vceo 150 v collector -base voltage vcbo 160 v emitter -base voltage vebo 5.0 v collector current continuous ic 600 ma power dissipation @ta=25 degc pd 625 mw derate above 25 deg c 5.0 mw/deg c power dissipation @tc=25 degc pd 1.5 w derate above 25 deg c 12 mw/deg c junction temperature tj 150 deg c storage temperature tstg -55 to +150 deg c thermal resistance junction to case rth(j-c) 83.3 deg c/w junction to ambient rth(j-a) 200 deg c/w electrical characteristics (ta=25 deg c unless otherwise specified) description symbol test condition min typ max unit collector -emitter voltage vceo* ic=1ua,ib=0 150 - - v collector -base voltage vcbo ic=100ua.ie=0 160 - - v emitter -base voltage vebo ie=10ua, ic=-0 5.0 - - v collector-cut off current icbo vcb=160v, ie=0 - - 50 na ta=100 deg c vcb=160v, ie=0 - - 50 ua iceo vce=150v, ib=0 1.0 ua emitter-cut off current iebo veb=4v, ic=0 - - 50 na dc current gain hfe* ic=1ma,vce=5v 50 - - ic=10ma,vce=5v 80 - 320 ic=50ma,vce=5v 50 - - is/iso 9002 lic# qsc/l- 000019.2 is / iecqc 700000 is / iecqc 750100 continental device india limited data sheet page 1 of 3
electrical characteristics (ta=25 deg c unless otherwise specified) 2n5401 description symbol test condition min typ max unit collector emitter saturation voltage vce(sat)* ic=10ma,ib=1ma - - 0.2 v ic=50ma,ib=5ma - - 0.5 v base emitter saturation voltage vbe(sat) * ic=10ma,ib=1ma - - 1.0 v ic=50ma,ib=5ma - - 1.0 v dynamic characteristics small signal current gain hfe ic=1ma, vce=10v 80 - 320 f=1khz transition frequency ft vce=10v,ic=10ma, 100 - 300 mhz f=100mhz output capacitance cobo vcb=10v, ie=0 - - 6.0 pf f=1mhz noise figure nf vce=5v, ic=250ua - - 8.0 db rs=1kohms, f=10hz to 15.7khz *pulse test: pulse width=300us, duty cycle=2% to-92 transistors on tape and ammo pack to-92 plastic package to-92 bulk to-92 t&a 1k/polybag 2k/ammo box 200 gm/1k pcs 645 gm/2k pcs 3" x 7.5" x 7.5" 12.5" x 8" x 1.8" 5.0k 2.0k 17" x 15" x 13.5" 17" x 15" x 13.5" 80.0k 32.0k 23 kgs 12.5 kgs package net weight/qty details standard pack inner carton box qty outer carton box qty gr wt size size p ac ki ng d eta il cumulative pitch error 1.0 mm/20 pitch to be measured at bottom of clinch at to p of bo dy t1 0.3 - 0.6 body width body height body thickness pitch of component feed hole pitch feed hole centre to component centre distance between outer leads component alignment tape width hold-down tape width hole position hold-down tape position lead wire clinch height component height length of snipped leads feed hole diameter total tape thickness lead - to - lead distancef1, clinch height pull - out force item a1 a t p po p2 f h w wo w1 w2 ho h1 l do t f2 h2 (p) symbol specification 4.0 4.8 3.9 6n min. 12.7 12.7 6.35 5.08 0 18 6 9 0.5 16 4 2.54 nom. 4.8 5.2 4.2 1 23.25 11.0 1.2 3 max. 1 0.3 0.4 +0.6 -0.2 0.5 0.2 +0.7 -0.5 0.2 0.5 0.2 +0.4 -0.1 tol . remarks notes 1. maximum alignment deviation between leads not to be greater than 0.2 mm. 2. maximum non-cumulative variation between tape feed holes shall not exceed 1 mm in 20 pit ch es . 3. holddow n tape not to exceed beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 4. no more than 3 consecutive missing components are permitted. 5. a tape trailer, having at least three feed holes are required after the last component. 6. splices shall not interfere w ith the sprocket feed holes. all dimensions in mm unless specified otherwise ammo pack s t y le adhesive ta p e on to p side flat side mechanical data t t1 t f1 f2 f p2 po do (p) w2 wo w1 w h1 a a1 p h0 l flat side of transistor and adhesive tape visible 2000 pcs./ammo pack label carrier strip 8.2" 1 3 " f e e d 1 . 7 7 " h h b 3 2 1 a k e d a a sec aa g d f f h c 3 2 1 3 2 1 all diminsions in mm. dim min. max. a 4.32 5.33 b 4.45 5.20 c 3.18 4.19 d 0.41 0.55 e 0.35 0.50 f5 deg g 1.14 1.40 h 1.14 1.53 k 12.70 ? pin configuration 1. collector 2. base 3. emitter continental device india limited data sheet page 2 of 3
disclaimer notes the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suited for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so as to confirm that the device(s) meet functionality parameters for your application. the information furnished on the cdil web site/cd is believed to be accurate and reliable. cdil however, does not assume res ponsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these pr oducts are not designed for use in life saving/support appliances or systems. cdil customers selling these pr oducts (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-579 6150 fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com continental device india limited data sheet page 3 of 3
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